ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,379, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"Semiconductor device and method for forming the same" was invented by Jhon-Jhy Liaw (Hsinchu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first circuit cell having first transistors, and a second circuit cell having second transistors and arranged with the first circuit cell in an X-direction. Each of the first transistors includes first nanostructures vertically stacked from each other. Each of the second transistors includes second nanostructures vertically stacked from each other. A cell pitch of the fi...