US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Method for forming epitaxial source/drain features using a self-aligned mask and semiconductor devices fabricated thereof" (Taiwanese, American Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,415, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming epitaxial source/drain features using a self-aligned mask and semiconductor devices fabricated thereof" was invented by Yao-Sheng Huang (Kaohsiung City, Taiwan), I-Ming Chang (Hsinchu, Taiwan) and Huang-Lin Chao (Hillsboro, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of the present disclosure provide a method of forming N-type and P-type source/drain features using one patterned mask and one self-aligned mask to increase windows of error tolerance and provide flexibilities for source/drain features of vario...