US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Memory precharge" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,784,812, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory precharge" was invented by Chi Lo (Hsinchu, Taiwan), Chieh Lee (Hsinchu, Taiwan), Yi-Ching Liu (Hsinchu, Taiwan) and Yih Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure describes a precharge circuit for a memory cell. In an example embodiment, a memory device comprises a memory array including a memory cell, a bit line connected to an output terminal of the memory cell, a reference bit line, and a sensing amplifier circuit coupled to the bit line and coupled to the reference bit line. The memory dev...