US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Low drop-out circuit, electronic device, and method of manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,782,992, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Low drop-out circuit, electronic device, and method of manufacturing the same" was invented by Yi-Hsiang Wang (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a low drop-out (LDO) circuit. The LDO circuit includes an input terminal, an output terminal, a cascode operational amplifier, and a power stage. The cascode operational amplifier is electrically connected to the input terminal. The power stage has a first terminal electrically connected to the input terminal, a second terminal electri...