US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Image sensor gate structure and doping profile" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,416, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Image sensor gate structure and doping profile" was invented by Chih-Kuan Yu (Zhushan Township, Taiwan), Shen-Hui Hong (Tainan City, Taiwan), Feng-Chi Hung (Chu-Bei City, Taiwan), Wen-I Hsu (Tainan City, Taiwan), Jen-Cheng Liu (Hsin-Chu City, Taiwan) and Dun-Nian Yaung (Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to semiconductor device with a multi-gate structure. The semiconductor device includes a substrate and a doped region disposed within the substrate. A gate electrode is disposed over the...