US Patent Issued to Taiwan Semiconductor Manufacturing on Nov. 3 for "Growth process and methods thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,333, issued on Nov. 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Growth process and methods thereof" was invented by Pin Chu Liang (Changhua, Taiwan), Hung-Yao Chen (Hsinchu, Taiwan) and Pei-Ren Jeng (Chu-Bei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes depositing a first dielectric layer over and along sidewalls of a first semiconductor fin and a second semiconductor fin, depositing a second dielectric layer over the first dielectric layer, recessing the first dielectric layer to define a dummy fin between the first semiconductor fin and the second semiconductor fin, forming a cap lay...