US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on Nov. 3 for "Gate sidewall structures of semiconductor devices and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,403, issued on Nov. 3, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Gate sidewall structures of semiconductor devices and methods of forming the same" was invented by Yi-Hong Wang (Taichung City, Taiwan), Hui-Hsuan Kung (Taichung City, Taiwan), Yao-Zhong Dong (Taichung City, Taiwan), Yi-Li Huang (Hsinchu County, Taiwan) and Yi-Chen Li (Taichung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods of forming the same are provided. In an embodiment, an exemplary method includes depositing a dummy gate material layer over a first fin-shaped active region, patterning the d...