US Patent Issued to Taiwan Semiconductor Manufacturing on May 26 for "Vertical self aligned gate all around transistor" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,830, issued on May 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Vertical self aligned gate all around transistor" was invented by Yu-Xuan Huang (Hsinchu, Taiwan), Hou-Yu Chen (Hsinchu, Taiwan), Cheng-Ting Chung (Hsinchu, Taiwan) and Jin Cai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming vertical gate all around transistors includes forming stack of semiconductor layers on a lower source/drain region. The stack of semiconductor layers includes a first layer, a second layer on the first layer, and a third layer on the second layer. The first and third layers have substantially...