US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 26 for "Semiconductor memory device and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,768, issued on May 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor memory device and method for manufacturing the same" was invented by Bo-Rong Lin (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu, Taiwan), Shi-Ning Ju (Hsinchu, Taiwan), Guan-Lin Chen (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a first dielectric wall, a second dielectric wall, first channel portions, second channel portions, an isolation wall, and a dielectric feature. The second dielectric wall is spaced apart from the first dielectric wal...