US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 26 for "Semiconductor device capable of releasing process charge, and method for manufacturing the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,834, issued on May 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device capable of releasing process charge, and method for manufacturing the same" was invented by Bo-Huan Hsin (Hsinchu, Taiwan), Ying-Han Chiou (Hsinchu, Taiwan) and Ming-Yen Tsai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first transistor, a first via contact, a second transistor and a second via contact. The first transistor includes a channel and a gate electrode. The first via contact is disposed on the gate electrode of the first transistor, and corresponds in position t...