US Patent Issued to Taiwan Semiconductor Manufacturing on May 26 for "Semiconductor contact structure including via structure with metal bulk layer nested within barrier liner and method for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,845, issued on May 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor contact structure including via structure with metal bulk layer nested within barrier liner and method for forming the same" was invented by Kuo-Chiang Tsai (Hsinchu City, Taiwan), Jeng-Ya Yeh (New Taipei City, Taiwan), Jhon-Jhy Liaw (Zhudong Township, Hsinchu County, Taiwan) and Mu-Chi Chiang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure is provided. The method for forming the semiconductor structure includes a first contact plug and a second contact plug through a first...