US Patent Issued to Taiwan Semiconductor Manufacturing on May 26 for "Multilayer ALD coating for critical components in process chamber" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,637,764, issued on May 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Multilayer ALD coating for critical components in process chamber" was invented by Ren-Guan Duan (Hsinchu, Taiwan), Chen-Hsiang Lu (Hsinchu, Taiwan), Chiun-Da Shiue (Hsinchu, Taiwan) and Chih-Kai Hu (Taoyuan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes: forming a first coating comprising amorphous rare earth metal-containing oxide directly on a surface of an article using a first atomic layer deposition (ALD) process that includes repeating a process of alumina deposition cycles followed by rare earth metal oxide depositi...