US Patent Issued to Taiwan Semiconductor Manufacturing on May 26 for "Memory device and semiconductor die" (American, Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,642,008, issued on May 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device and semiconductor die" was invented by Shy-Jay Lin (Hsinchu County, Taiwan), Nuo Xu (San Jose, Calif.) and Yen-Lin Huang (Menlo Park, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device including a pair of magnetic conductive posts, a Spin-Hall-Effect-assisted (SHE-assisted) layer, and a magnetic tunneling junction (MTJ) structure. The Spin-Hall-Effect-assisted (SHE-assisted) layer is disposed over and electrically connected to the pair of magnetic conductive posts. The magnetic tunneling junction (MTJ) structure has ...