US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 26 for "Integrated circuit device and manufacturing method thereof" (Taiwanese Inventor)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,847, issued on May 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Integrated circuit device and manufacturing method thereof" was invented by Jhon-Jhy Liaw (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method of manufacturing an integrated circuit device includes: forming a first semiconductor fin over a first conductivity type well region on a substrate; forming a first gate structure extending across the first semiconductor fin; forming a plurality of first epitaxial structures of the first conductivity type on the first semiconductor fin and at opposite sides of the first gate structu...