US Patent Issued to Taiwan Semiconductor Manufacturing on May 26 for "Field effect transistor with top-protected gate electrode and methods for forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,785, issued on May 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Field effect transistor with top-protected gate electrode and methods for forming the same" was invented by Yu-Hsiang Yang (Tainan, Taiwan), Chen-Ming Huang (Tainan, Taiwan), Po-Wei Liu (Tainan, Taiwan), Shih-Hsien Chen (Zhubei, Taiwan), Hung-Ling Shih (Tainan, Taiwan) and Chang Hung-Chang (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A field effect transistor includes a source region and a drain region embedded in a portion of a semiconductor substrate; a gate dielectric overlying a channel region located between the source region ...