US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 26 for "Buffer epitaxial region in semiconductor devices and manufacturing method of the same" (Taiwanese Inventor)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,829, issued on May 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Buffer epitaxial region in semiconductor devices and manufacturing method of the same" was invented by Shahaji B. More (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a semiconductor fin protruding from a semiconductor substrate. The semiconductor fin has an epitaxial portion and a mesa portion under the epitaxial portion. The epitaxial portion has a plurality of channel layers interleaved with a plurality of sacrificial layers. The semiconductor substrate has a top surface in (110) crystal plane. T...