US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 19 for "Stacked multi-gate device with barrier layers" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,159, issued on May 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Stacked multi-gate device with barrier layers" was invented by Che Chi Shih (Taoyuan, Taiwan), Chia-Hao Yu (New Taipei, Taiwan), Wei-Yen Woon (Taoyuan, Taiwan) and Szuya Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods of forming the same are provided. An exemplary method includes forming a stack over a substrate and patterning the stack and a portion of the substrate to form a fin-shaped structure comprising a base portion formed from the substrate and a top portion formed from the stack....