US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Semiconductor transistor devices including nanostructures between dielectric walls and methods of manufacturing" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,164, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor transistor devices including nanostructures between dielectric walls and methods of manufacturing" was invented by Kuo-Cheng Chiang (Zhubei City, Taiwan), Guan-Lin Chen (Baoshan Township, Taiwan), Jung-Chien Cheng (Tainan City, Taiwan), Shi Ning Ju (Hsinchu, Taiwan) and Chih-Hao Wang (Baoshan Township, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a first stack of nanostructures formed over a substrate; a second stack of nanostructures formed adjacent to the first stack; a first gate structure on the nanostruc...