US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 19 for "Semiconductor structure with front side source drain contact and oppositely positioned source drain contacts" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,179, issued on May 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor structure with front side source drain contact and oppositely positioned source drain contacts" was invented by Li-Zhen Yu (New Taipei City, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan) and Huan-Chieh Su (Tianzhong Township, Changhua County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes nanostructures over a substrate, and a gate structure surrounding the nanostructures. The gate structure includes gate dielectric l...