ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,128, issued on May 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor structure and manufacturing method thereof" was invented by Jhon Jhy Liaw (Hsinchu County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a transistor on a front-side of a substrate, the transistor comprising a channel region, a gate structure surrounding the channel region, and source/drain regions on opposite sides of the gate structure; forming a front-side contact on a first one of the source/drain regions of the transistor; forming a back-side contact on a second one of the source/drain regions...