US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 19 for "Semiconductor device and method of manufacturing thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,189, issued on May 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and method of manufacturing thereof" was invented by Wen-Yen Chen (Hsinchu, Taiwan), Tsai-Yu Huang (Taoyuan, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a field effect transistor disposed over a first main surface of a semiconductor substrate, a distributed Bragg reflector disposed over an opposing second main surface of the semiconductor substrate, and a conductive via disposed in the distributed Bragg reflector. The field effect transistor include...