US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Semiconductor device and method having high-kappa bonding layer" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,500, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method having high-kappa bonding layer" was invented by Che Chi Shih (Hsinchu, Taiwan), Cheng-Ting Chung (Hsinchu, Taiwan), Han-Yu Lin (Hsinchu, Taiwan), Wei-Yen Woon (Hsinchu, Taiwan) and Szuya Liao (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor devices and methods are provided which facilitate improved thermal conductivity using a high-kappa dielectric bonding layer. In at least one example, a device is provided that includes a first substrate. A semiconductor device layer is disposed on the ...