US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 19 for "Multigate devices with varying channel layers" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,186, issued on May 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Multigate devices with varying channel layers" was invented by Kuan-Lun Cheng (Hsin-Chu, Taiwan), Yu-Xuan Huang (Hsunchu, Taiwan), Hou-Yu Chen (Hsinchu County, Taiwan) and Ching-Wei Tsai (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Multigate devices and methods for fabricating such are disclosed herein. An exemplary multigate device includes a first FET disposed in a first region; and a second FET disposed in a second region of a substrate. The first FET includes first channel layers disposed over the substrate, and a first gate s...