US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 19 for "Method for forming semiconductor structure" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,233, issued on May 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming semiconductor structure" was invented by Hong-Chih Chen (Changhua County, Taiwan), Fu-Hsiang Su (Zhubei city, Taiwan), Yu-San Chien (Hsinchu city, Taiwan) and Shih-Hsun Chang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure is provided. The method includes forming a first active region, forming an interlayer dielectric layer over a source/drain region of the first active region, forming a gate stack to surround the channel region of the first active region, and etch...