US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 19 for "Method for forming semiconductor device structure with gate stack" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,208, issued on May 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Method for forming semiconductor device structure with gate stack" was invented by Huan-Chieh Su (Changhua County, Taiwan), Chun-Yuan Chen (HsinChu, Taiwan), Lin-Yu Huang (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor device structure is provided. The method includes providing a substrate, a nanostructure, an isolation structure, an isolation fin, and a gate stack. The method includes turning the substrate upside down and removing the base to expose ...