US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Memory device and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,141, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Japan).

"Memory device and method of forming the same" was invented by Hung-Chang Sun (Kaohsiung, Taiwan), Sheng-Chih Lai (Hsinchu County, Taiwan), Tsuching Yang (Taipei, Taiwan), Yu-Wei Jiang (Hsinchu, Taiwan) and Kuo-Chang Chiang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a dielectric layer, a conductive layer, electrode layers and an oxide semiconductor layer. The dielectric layer has a first surface and a second surface opposite to the first surface. The conductive layer is disposed on the first surface of the dielec...