US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Memory device, and method for forming thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,121, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory device, and method for forming thereof" was invented by Hung-Li Chiang (Taipei, Taiwan), Jer-Fu Wang (Taipei, Taiwan), Yi-Tse Hung (Hsinchu, Taiwan), Chao-Ching Cheng (Hsinchu, Taiwan) and Iuliana Radu (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device is provided. The memory device includes a write pass-gate transistor, a read pass-gate transistor, a write word line, and a read word line. The write pass-gate transistor is disposed in a first layer. The read pass-gate transistor is disposed in a second laye...