US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Memory cell with a buffer layer and its fabrication process" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,146, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Memory cell with a buffer layer and its fabrication process" was invented by Tsann Lin (Hsinchu, Taiwan), Chien-Min Lee (Hsinchu County, Taiwan) and Ji-Feng Ying (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Some embodiments relate to an integrated chip including a bottom electrode over a semiconductor substrate. A seed layer overlies the bottom electrode. A data storage structure is arranged on the seed layer. A first buffer layer is arranged between the bottom electrode and the seed layer. The first buffer layer is in physical co...