US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Field effect transistor with multiple hybrid fin structure and method" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,181, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Field effect transistor with multiple hybrid fin structure and method" was invented by Zhi-Chang Lin (Hsinchu, Taiwan), Chih-Hao Wang (Hsinchu, Taiwan) and Kuan-Lun Cheng (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a substrate, first and second gate structures, first and second hybrid fins, and first and second sidewalls. The first gate structure is over and surrounds a first vertical stack of nanostructures. The second gate structure is over and surrounds a second vertical stack of nanostructures. The second ga...