US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 19 for "All-tungsten scheme for source/drain contact, source/drain via, and gate via" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,493, issued on May 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"All-tungsten scheme for source/drain contact, source/drain via, and gate via" was invented by Chen-Hung Tsai (Kaohsiung, Taiwan), Pang-Chi Wu (Hsinchu, Taiwan) and Fu-Kai Yang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method for semiconductor fabrication. The method includes receiving a workpiece having gate structures over channel regions on a substrate and source/drain (S/D) features adjacent to the channel regions. The method then forms tungsten S/D contacts over the S/D features in a fi...