ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,398, issued on May 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor structure and method of manufacturing the same" was invented by Chansyun David Yang (Hsinchu, Taiwan) and Ding-Kang Shih (New Taipei, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor structure is provided. The method may include several operations. A substrate is provided, received or formed, wherein the substrate includes an epitaxial structure in a fin structure of the substrate and a metal gate structure over the fin structure. An insulating layer covering the metal gate structure ...