US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 12 for "Semiconductor device with selectively etched dielectric fins" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,418, issued on May 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Semiconductor device with selectively etched dielectric fins" was invented by Zhi-Chang Lin (Hsinchu County, Taiwan), Wei-Hao Wu (Hsinchu City, Taiwan) and Jia-Ni Yu (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a first device fin and a second device fin that are each located in a first region of the semiconductor device. The first region has a first pattern density. A first dummy fin is located in the first region. The first dummy fin is disposed between the first device fin and the second d...