ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,365, issued on May 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor device structure and methods of forming the same" was invented by Cheng-Wei Chang (Taipei, Taiwan), Shahaji B. More (Hsinchu, Taiwan), Chi-Yu Chou (Hsinchu, Taiwan) and Yueh-Ching Pai (Taichung, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure, along with methods of forming such, are described. The structure includes a first plurality of vertically aligned semiconductor layers disposed over a substrate and a first gate electrode layer surrounding each of the first plurality of vertically aligne...