US Patent Issued to Taiwan Semiconductor Manufacturing on May 12 for "Semiconductor device and methods of formation" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,385, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and methods of formation" was invented by Kaochao Chen (Hsinchu City, Taiwan), Chia-Cheng Ho (Hsinchu City, Taiwan), Chia-Jui Lee (Hsinchu County, Taiwan) and Chia-Yu Wei (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A high voltage transistor may include a stepped dielectric layer between a field plate structure and a channel region of the high voltage transistor in a substrate. The stepped dielectric layer may increase the breakdown voltage of the high voltage transistor by reducing the electric field str...