US Patent Issued to Taiwan Semiconductor Manufacturing on May 12 for "Lens structure configured to increase quantum efficiency of image sensor" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,442, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Lens structure configured to increase quantum efficiency of image sensor" was invented by Jiech-Fun Lu (Madou Township, Taiwan) and Chun-Tsung Kuo (Tainan, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present disclosure are directed towards a method for forming an image sensor, the method includes forming a photodetector within a substrate. The substrate is etched to define a plurality of first protrusions over the photodetector. A first dielectric layer is deposited on the substrate. A second dielectric layer is ...