US Patent Issued to Taiwan Semiconductor Manufacturing on May 12 for "Interfacial dual passivation layer for a ferroelectric device and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,382, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Interfacial dual passivation layer for a ferroelectric device and methods of forming the same" was invented by Jiamin Wang (Hsinchu, Taiwan), Blanka Magyari-Kope (Hsinchu, Taiwan), Chris Liu (Hsinchu, Taiwan) and Ashwathi Iyer (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes, from bottom to top or from top to bottom, a gate electrode, a ferroelectric dielectric layer, a metal-rich metal oxide layer, a dielectric metal nitride layer, and a metal oxide semiconductor layer. A ferroelectric field effect ...