US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 12 for "Gate profile modulation for semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,401, issued on May 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Gate profile modulation for semiconductor device" was invented by Tien-Shun Chang (Hsinchu, Taiwan), Kuo-Ju Chen (Hsinchu, Taiwan), Sih-Jie Liu (Hsinchu, Taiwan), Wei-Fu Wang (Hsinchu, Taiwan), Yi-Chao Wang (Hsinchu, Taiwan), Li-Ting Wang (Hsinchu, Taiwan), Su-Hao Liu (Hsinchu, Taiwan), Huicheng Chang (Hsinchu, Taiwan) and Yee-Chia Yeo (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for manufacturing a semiconductor device includes: forming a patterned structure on a substrate, the patterned structure including a dielect...