US Patent Issued to Taiwan Semiconductor Manufacturing on May 12 for "Fast charge transfer floating diffusion region for a photodetector and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,448, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Fast charge transfer floating diffusion region for a photodetector and methods of forming the same" was invented by Feng-Chien Hsieh (Pingtung City, Taiwan), Yun-Wei Cheng (Taipei City, Taiwan), Wei-Li Hu (Tainan City, Taiwan), Kuo-Cheng Lee (Tainan City, Taiwan) and Hsin-Chi Chen (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A subpixel including at least one second-conductivity-type pinned photodiode layer that forms a p-n junction with a substrate semiconductor layer, at least one floating diffusion region, and at least one t...