ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,673, issued on March 31, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Semiconductor structure and method making the same" was invented by Hsin-Yen Huang (Yonghe City, Taiwan), Kai-Fang Cheng (Taoyuan City, Taiwan), Chi-Lin Teng (Taichung City, Taiwan), Hai-Ching Chen (Hsin-Chu City, Taiwan) and Tien-I Bao (Taoyuan County, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure provides a method for forming an integrated circuit (IC) structure. The method comprises providing a substrate including a conductive feature; forming aluminum (Al)-containing dielectric layer on the conductive featu...