US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 31 for "Semiconductor device with protective gate structure and methods of fabrication thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,463, issued on March 31, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device with protective gate structure and methods of fabrication thereof" was invented by Yi-Ren Chen (Taoyuan, Taiwan) and Chung-Ting Li (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes a substrate having a first side and a second side opposing the first side, a source/drain epitaxial feature disposed adjacent the first side of the substrate, wherein the source/drain epitaxial feature comprises a first epitaxial layer, a se...