US Patent Issued to Taiwan Semiconductor Manufacturing on March 31 for "Semiconductor device including integrated capacitor and vertical channel transistor and methods of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,442, issued on March 31, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device including integrated capacitor and vertical channel transistor and methods of forming the same" was invented by Yun-Feng Kao (Hsinchu, Taiwan) and Katherine H. Chiang (New Taipei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an insulating base including a trench, a transistor including a gate electrode and vertical channel in the trench, and a source electrode in the insulating base outside the trench, an isolation layer on the gate electrode in the trench, and a capacitor includ...