ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,495, issued on March 31, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Semiconductor device and method of manufacture" was invented by Chun-Yi Lee (Hsinchu, Taiwan), Hong-Hsien Ke (Changhua County, Taiwan), Chung-Ting Ko (Kaohsiung City, Taiwan), Chia-Hui Lin (Dajia Township, Taiwan) and Jr-Hung Li (Chupei City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An etch stop layer is formed over a semiconductor fin and gate stack. The etch stop layer is formed utilizing a series of pulses of precursor materials. A first pulse introduces a first precursor material to the semiconductor fin and gate stack. A second...