ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,498, issued on March 31, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).
"Semiconductor device and forming method thereof" was invented by Hsin-Yi Lee (Hsinchu City, Taiwan), Kuan-Yu Wang (Hsinchu City, Taiwan), Cheng-Lung Hung (Hsinchu City, Taiwan) and Chi-On Chui (Hsinchu City, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method of forming a semiconductor device includes forming a fin structure having a stack of alternating first semiconductor layers and second semiconductor layers over a substrate, the first semiconductor layers and the second semiconductor layers having different compositions, forming ...