ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,623, issued on March 31, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).
"RRAM with a barrier layer" was invented by Fu-Chen Chang (New Taipei, Taiwan), Kuo-Chi Tu (Hsin-Chu, Taiwan), Wen-Ting Chu (Kaohsiung, Taiwan) and Chu-Jie Huang (Tainan, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Various embodiments of the present application are directed towards a resistive random-access memory (RRAM) cell comprising a barrier layer to constrain the movement of metal cations during operation of the RRAM cell. In some embodiments, the RRAM cell further comprises a bottom electrode, a top electrode, a switching layer, ...