US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 31 for "Image sensor device with light blocking structure and adhesion layer embedded in oxide layer" (Taiwanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,523, issued on March 31, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan).

"Image sensor device with light blocking structure and adhesion layer embedded in oxide layer" was invented by Zen-Fong Huang (Tainan City, Taiwan) and Fu-Cheng Chang (Tainan City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An image sensor device includes a substrate, a deep-trench isolation structure, an oxide layer, a light blocking structure, and an adhesion layer. The substrate has a photosensitive region. The deep-trench isolation structure is in the substrate and adjacent the photosensitive region. The oxide layer is over the pho...