US Patent Issued to Taiwan Semiconductor Manufacturing on March 31 for "Field effect transistor with isolation structure and method" (Taiwanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,475, issued on March 31, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Field effect transistor with isolation structure and method" was invented by Kuan-Ting Pan (Hsinchu, Taiwan), Kuo-Cheng Chiang (Hsinchu, Taiwan), Shi Ning Ju (Hsinchu, Taiwan) and Chih-Hao Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes: a first stack of nanostructures; a second stack of nanostructures horizontally offset from the first stack; a first source/drain region abutting the first stack of nanostructures; a second source/drain region abutting the second stack of nanostructures; a wall structure bet...