US Patent Issued to Taiwan Semiconductor Manufacturing on March 31 for "Dielectric layer for nanosheet protection and method of forming the same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,464, issued on March 31, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Dielectric layer for nanosheet protection and method of forming the same" was invented by Cheng-I Lin (Hsinchu, Taiwan), Shu-Han Chen (Hsinchu, Taiwan) and Chi On Chui (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device includes a gate stack having a top portion, and a stacked structure underlying the top portion of the gate stack. The stacked structure includes a plurality of semiconductor nanostructures, with upper nanostructures in the plurality of semiconductor nanostructures overlapping respective lower nanostructures. ...