US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on March 31 for "Bonding structure with stress buffer zone and method of forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,711, issued on March 31, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Bonding structure with stress buffer zone and method of forming same" was invented by SyuFong Li (Taoyuan, Taiwan), Yu-Ping Tseng (Taipei City, Taiwan), Li-Hsien Huang (Hsinchu County, Taiwan), Yao-Chun Chuang (Hsinchu City, Taiwan) and Yinlung Lu (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes depositing a first dielectric layer on a first substrate of a first device die, etching the first dielectric layer to form a trench, depositing a metallic material in the trench and on a top surface of the first diele...