ALEXANDRIA, Va., March 31 -- United States Patent no. 12,593,459, issued on March 31, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).
"Backside memory integration" was invented by Hsin-Wen Su (Yunlin County, Taiwan), Jui-Lin Chen (Taipei City, Taiwan), Shih-Hao Lin (Hsinchu City, Taiwan), Ming-Yen Chuang (Hsinchu City, Taiwan), Chenchen Jacob Wang (Hsinchu, Taiwan), Lien-Jung Hung (Taipei, Taiwan) and Ping-Wei Wang (Hsin-Chu, Taiwan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Semiconductor structures and methods of the forming the same are provided. A semiconductor structure includes a source feature and a drain feature, an active region between the source feature and th...