US Patent Issued to Taiwan Semiconductor Manufacturing on March 3 for "Top electrode via with low contact resistance" (Taiwanese Inventors)

ALEXANDRIA, Va., March 3 -- United States Patent no. 12,568,777, issued on March 3, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Top electrode via with low contact resistance" was invented by Bi-Shen Lee (Hsin-Chu, Taiwan), Hai-Dang Trinh (Hsinchu, Taiwan), Hsun-Chung Kuang (Hsinchu, Taiwan), Tzu-Chung Tsai (Hsinchu County, Taiwan) and Yao-Wen Chang (Taipei, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure, in some embodiments, relates to a method of forming a memory device. The method includes forming a data storage layer on a bottom electrode layer over a substrate, forming a first top electrode layer over the data storage layer, and forming a ...